公开(公告)号：US20240318307A1

公开(公告)日：2024-09-26

申请号：US18611936

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Heesun Song ,  Seongwan Kim ,  Heeyeon Kim ,  Seongho Park ,  Hyunho Choi

IPC: C23C16/44

CPC classification number: C23C16/4412 ,  H01L21/67017

Abstract: Provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.