公开(公告)号：US20240318307A1

公开(公告)日：2024-09-26

申请号：US18611936

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Heesun Song ,  Seongwan Kim ,  Heeyeon Kim ,  Seongho Park ,  Hyunho Choi

IPC: C23C16/44

CPC classification number: C23C16/4412 ,  H01L21/67017

Abstract: Provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.

公开(公告)号：US11250163B2

公开(公告)日：2022-02-15

申请号：US16983038

申请日：2020-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheolju Hwang ,  Seongho Park ,  Taeung Jung

IPC: G06F21/62 ,  H04L29/08 ,  H04L9/32 ,  H04L9/08 ,  G06Q30/02 ,  H04W12/02 ,  H04W84/12 ,  H04L29/06 ,  H04L67/50

Abstract: Provided is a data management method of a server, including receiving, from a first server, first data, in which a first identification (ID) associated with a device and a first encryption identification (ID) that encrypts an ID associated with an advertisement are mapped and second data, in which a second ID associated with the advertisement and a second encryption ID that encrypts an ID associated with the device are mapped; converting a second encryption ID associated with an electronic device, received from a second server, to the second ID based on the second data, and transmitting the converted second ID and third data to an advertisement service server; and converting a first encryption ID associated with the electronic device, received from a third server, to the first ID based on the first data, and transmitting the converted first ID and fourth data to a general service server.

公开(公告)号：US20210042444A1

公开(公告)日：2021-02-11

申请号：US16983038

申请日：2020-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheolju Hwang ,  Seongho Park ,  Taeung Jung

IPC: G06F21/62 ,  H04L29/08 ,  H04L9/08 ,  H04L9/32

Abstract: Provided is a data management method of a server, including receiving, from a first server, first data, in which a first identification (ID) associated with a device and a first encryption identification (ID) that encrypts an ID associated with an advertisement are mapped and second data, in which a second ID associated with the advertisement and a second encryption ID that encrypts an ID associated with the device are mapped; converting a second encryption ID associated with an electronic device, received from a second server, to the second ID based on the second data, and transmitting the converted second ID and third data to an advertisement service server; and converting a first encryption ID associated with the electronic device, received from a third server, to the first ID based on the first data, and transmitting the converted first ID and fourth data to a general service server.

公开(公告)号：US10923402B2

公开(公告)日：2021-02-16

申请号：US16358810

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Chul Seo ,  Kyoungpil Park ,  Doo-Hwan Park ,  Seongho Park ,  Aee Young Park ,  Kyungmin Chung

IPC: H01L21/8238 ,  H01L21/311 ,  H01L21/308 ,  H01L27/092 ,  H01L21/768 ,  H01L21/56 ,  H01L21/033

Abstract: A method of manufacturing a semiconductor device may include forming a hardmask layer on a substrate, forming a first mold pattern on the hardmask layer using a first photolithography process, conformally forming a spacer layer on the first mold pattern and on portions of the hardmask layer exposed by the first mold pattern, forming a first mold layer using a second photolithography process. The first mold layer may have a first opening that exposes a portion of the spacer layer. The method may include forming a spacer pattern by anisotropically etching the portion of the spacer layer exposed by the first opening until a portion of a top surface of the hardmask layer is exposed, and using the spacer pattern as an etching mask to pattern the hardmask layer.

公开(公告)号：US10062606B2

公开(公告)日：2018-08-28

申请号：US15837132

申请日：2017-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkong Siew ,  Seongho Park

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76844 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods of fabricating a semiconductor device include forming a lower interlayer insulating layer and a conductive base structure, and forming a middle interlayer insulating layer covering the lower interlayer insulating layer and the conductive base structure. The methods include etching the middle interlayer insulating layer to form a via hole and an interconnection trench vertically aligned with the via hole, and forming a via barrier layer on inner walls of the via hole and an interconnection barrier layer on inner walls and a bottom of the interconnection trench, the via barrier layer not being formed on an upper surface of the conductive base structure The methods include forming a via plug on the via barrier layer to fill the via hole, forming a seed layer on the interconnection trench and the via plug, forming an interconnection electrode on the seed layer, and forming an interconnection capping layer on the interconnection electrode.