公开(公告)号：US20210062335A1

公开(公告)日：2021-03-04

申请号：US17010541

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Hyouncheol Kim ,  Junseong Park ,  Jaewon Yu ,  Hyunju Lee ,  Kwanghyun Jin ,  Youngmin Ha

IPC: C23C16/44 ,  B05B1/02

Abstract: An apparatus for manufacturing a semiconductor device includes a boat configured to support a plurality of stacked substrates, a first tube surrounding the boat in a lateral direction and having a cylindrical shape with an upper portion thereof being open, and a cleaning gas supply nozzle extending from an outer portion of the first tube to a portion between an interior sidewall of the first tube and the boat. The cleaning gas supply nozzle may include a first segment extending from the outer portion of the first tube to an inner portion of the first tube, a second segment extending in a lengthwise direction of the first tube from an end of the first segment, and a third segment extending in a direction differing from the extension direction of the second segment from an end of the second segment.

公开(公告)号：US11715653B2

公开(公告)日：2023-08-01

申请号：US16694213

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeonghoon Kim ,  Byunghwan Kong ,  Seungyong Bae ,  Jaehyun An

IPC: H01L21/67

CPC classification number: H01L21/67109 ,  H01L21/6719 ,  H01L21/67115

Abstract: A substrate processing apparatus includes a process chamber, a support part, disposed in the process chamber, having a substrate loading region in which a substrate is seated, a heating part disposed in a location opposing the substrate loading region to heat the substrate loading region, and a reflective member, disposed in a location opposing the substrate loading region in the process chamber, in which a sealed hollow portion is disposed.

公开(公告)号：US12230514B2

公开(公告)日：2025-02-18

申请号：US17499988

申请日：2021-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghwan Kong ,  Heeyeon Kim ,  Homin Son ,  Geunkyu Choi

IPC: H01L21/67

Abstract: A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.

公开(公告)号：US20240318307A1

公开(公告)日：2024-09-26

申请号：US18611936

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Heesun Song ,  Seongwan Kim ,  Heeyeon Kim ,  Seongho Park ,  Hyunho Choi

IPC: C23C16/44

CPC classification number: C23C16/4412 ,  H01L21/67017

Abstract: Provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.