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1.
公开(公告)号:US10916655B2
公开(公告)日:2021-02-09
申请号:US16591958
申请日:2019-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woobin Song , Heiseung Kim , Mirco Cantoro , Sangwoo Lee , Minhee Cho , Beomyong Hwang
Abstract: A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.
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2.
公开(公告)号:US11342456B2
公开(公告)日:2022-05-24
申请号:US17144444
申请日:2021-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woobin Song , Heiseung Kim , Mirco Cantoro , Sangwoo Lee , Minhee Cho , Beomyong Hwang
Abstract: A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.
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