公开(公告)号：US10916655B2

公开(公告)日：2021-02-09

申请号：US16591958

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woobin Song ,  Heiseung Kim ,  Mirco Cantoro ,  Sangwoo Lee ,  Minhee Cho ,  Beomyong Hwang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/161 ,  H01L21/02 ,  H01L21/28

Abstract: A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.

公开(公告)号：US11342456B2

公开(公告)日：2022-05-24

申请号：US17144444

申请日：2021-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woobin Song ,  Heiseung Kim ,  Mirco Cantoro ,  Sangwoo Lee ,  Minhee Cho ,  Beomyong Hwang

IPC: H01L29/78 ,  H01L29/161 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28

Abstract: A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.