公开(公告)号：US20150255336A1

公开(公告)日：2015-09-10

申请号：US14635017

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Jeong Moon ,  Woo-Cheol Noh ,  Woo-Jin Jang ,  Hun Kim ,  Hong-Jae Shin

IPC: H01L21/768

CPC classification number: H01L21/76871 ,  C23C14/185 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor device, an insulating interlayer is formed on a substrate. The insulating interlayer is partially removed to form an opening. A barrier conductive layer is formed on a sidewall and a bottom of the opening. An RF sputtering process and a DC sputtering process are performed independently on the barrier conductive layer to form a seed layer. A plated layer is formed on the seed layer.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成绝缘中间层。 部分去除绝缘中间层以形成开口。 在开口的侧壁和底部上形成阻挡导电层。 在阻挡导电层上独立地进行RF溅射工艺和DC溅射工艺以形成种子层。 在种子层上形成镀层。

公开(公告)号：US09281240B2

公开(公告)日：2016-03-08

申请号：US14635017

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-Jeong Moon ,  Woo-Choel Noh ,  Woo-Jin Jang ,  Hun Kim ,  Hong-Jae Shin

IPC: H01L21/768

CPC classification number: H01L21/76871 ,  C23C14/185 ,  C23C14/3464 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor device, an insulating interlayer is formed on a substrate. The insulating interlayer is partially removed to form an opening. A barrier conductive layer is formed on a sidewall and a bottom of the opening. An RF sputtering process and a DC sputtering process are performed independently on the barrier conductive layer to form a seed layer. A plated layer is formed on the seed layer.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成绝缘中间层。 部分去除绝缘中间层以形成开口。 在开口的侧壁和底部上形成阻挡导电层。 在阻挡导电层上独立地进行RF溅射工艺和DC溅射工艺以形成种子层。 在种子层上形成镀层。

公开(公告)号：US08993436B2

公开(公告)日：2015-03-31

申请号：US14199031

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Whan Ko ,  Jong-Sam Kim ,  Hong-Jae Shin ,  Seung-Il Bok ,  Sae-Il Son ,  Woo-Jin Jang

IPC: H01L21/475 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/475 ,  H01L21/76811 ,  H01L21/76813 ,  H01L2221/1063

Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.

Abstract translation: 一种制造半导体器件的方法包括：在包括形成在绝缘膜上具有第一开口的导电掩模图案的下部图案的基板上依次形成蚀刻停止膜和绝缘膜，使用该绝缘膜在绝缘膜中形成通孔 导电掩模图案作为蚀刻掩模，通孔暴露蚀刻停止膜，去除导电掩模图案，以及在去除导电掩模图案之后沿通孔的侧壁形成钝化膜。