公开(公告)号：US20220139956A1

公开(公告)日：2022-05-05

申请号：US17578965

申请日：2022-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hoon CHOI ,  Sunggil KIM ,  Seulye KIM ,  HongSuk KIM ,  Phil Ouk NAM ,  Jaeyoung AHN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L29/792 ,  H01L29/423 ,  H01L29/04 ,  H01L27/11565 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L27/11524 ,  H01L27/11556

Abstract: A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.

公开(公告)号：US20180315770A1

公开(公告)日：2018-11-01

申请号：US15864410

申请日：2018-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hoon CHOI ,  Sunggil KIM ,  Seulye KIM ,  HongSuk KIM ,  Phil Ouk NAM ,  Jaeyoung AHN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L29/04 ,  H01L29/792 ,  H01L29/423

Abstract: A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.

公开(公告)号：US20200243558A1

公开(公告)日：2020-07-30

申请号：US16845615

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hoon CHOI ,  Sunggil KIM ,  Seulye KIM ,  HongSuk KIM ,  Phil Ouk NAM ,  Jaeyoung AHN

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065

Abstract: A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.