公开(公告)号：US10664195B2

公开(公告)日：2020-05-26

申请号：US15992230

申请日：2018-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Ju Kim ,  Hyo Bong Son ,  Ml-Hyang Lee

IPC: G06F12/00 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  H01L27/11582

Abstract: A memory device, as provided herein, may include an invalidation bit circuit and a cell array. In methods for controlling such memory devices, the invalidation bit circuit may receive an invalid control command from a memory controller to update the invalid bit data to one of first and second states different from each other, the invalidation bit circuit may receive a read control command from the memory controller and may provide an invalid signal when the invalid bit data is in the first state, the invalidation bit circuit may transmit a data request when the invalid bit data is in the second state, and the cell array may receive the data request and provide data.

公开(公告)号：US20230195344A1

公开(公告)日：2023-06-22

申请号：US17937068

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Mi Yoo ,  Young-Sik Lee ,  Jeong-Eun Kim ,  Hye Ju Kim ,  So Dam Hwang

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/064 ,  G06F3/0607 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0253

Abstract: A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.

公开(公告)号：US12056377B2

公开(公告)日：2024-08-06

申请号：US17937068

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Mi Yoo ,  Young-Sik Lee ,  Jeong-Eun Kim ,  Hye Ju Kim ,  So Dam Hwang

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/064 ,  G06F3/0607 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0253

Abstract: A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.