公开(公告)号：US08999748B2

公开(公告)日：2015-04-07

申请号：US13670001

申请日：2012-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Young Jung ,  Joo-Young Kim ,  Hyeok Kim

IPC: H01L51/40 ,  H01L29/08 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0004 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/102

Abstract: According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

Abstract translation: 根据示例性实施例，制造有机薄膜晶体管的方法包括在基板上依次形成栅电极，栅极绝缘体，源电极和漏电极，在源极上形成第一自组装单层， 漏电极从第一自组装单层前体形成，在第二自组装单层前体上形成第二自组装单层，该第二自组装单层前体与第一自组装单层前体不同，并在第一自组装单层前体上形成有机半导体 自组装单层和第二自组装单层。 第一自组装单层和第二自组装单层可以在单个容器中同时或顺序形成。 可以根据该方法制造有机薄膜晶体管。 显示装置可以包括有机薄膜晶体管。