公开(公告)号：US20240222451A1

公开(公告)日：2024-07-04

申请号：US18243818

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wandon Kim ,  Jaeseoung Park ,  Hyunwoo Kim ,  Hyunbae Lee ,  Jeonghyuk Yim ,  Hyoseok Choi

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. The second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. Within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. A size of the first grain is greater than a size of each of the second grains. A width of the first layer is greater than a width of the first contact structure.

公开(公告)号：US10199471B2

公开(公告)日：2019-02-05

申请号：US15059519

申请日：2016-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok Choi ,  Hwichan Jun ,  Yoonhae Kim ,  Chulsung Kim ,  Heungsik Park ,  Doo-Young Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

公开(公告)号：US11133392B2

公开(公告)日：2021-09-28

申请号：US16243564

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok Choi ,  Hwichan Jun ,  Yoonhae Kim ,  Chulsung Kim ,  Heungsik Park ,  Doo-Young Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.