公开(公告)号：US20230261024A1

公开(公告)日：2023-08-17

申请号：US18306006

申请日：2023-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Euiyeol Kim ,  Hyounmin Baek ,  Jeong-Ho Lee ,  Youngwoo Chung ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14621

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

公开(公告)号：US11670661B2

公开(公告)日：2023-06-06

申请号：US16934278

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinyoung Kim ,  Euiyeol Kim ,  Hyounmin Baek ,  Jeong-Ho Lee ,  Youngwoo Chung ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.