公开(公告)号：US20240184216A1

公开(公告)日：2024-06-06

申请号：US18242407

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Sang LEE ,  Eun Hee JEANG ,  Dong Hyeong KIM ,  Teun BOEREN ,  Jeong-Gil KIM ,  Kyung Bin PARK ,  Hyuck SHIN

IPC: G03F7/00

CPC classification number: G03F7/7055

Abstract: A monitoring unit for measuring, in real time, the power of an EUV beam transmitted to a substrate and a substrate treating apparatus including the monitoring unit. The substrate treating apparatus comprising a source which generates an EUV beam, a scanner which transfers a mask pattern to a substrate by using the EUV beam, and a monitoring unit which comprises a detector for detecting the EUV beam and monitoring the power of the EUV beam in real time, wherein the detector is disposed on a path along which the EUV beam passes through a first mirror assembly provided in the scanner and moves to a reticle on which the mask pattern is formed.

公开(公告)号：US20240272559A1

公开(公告)日：2024-08-15

申请号：US18455277

申请日：2023-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Jeong-Gil KIM ,  Hyuck SHIN

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70591 ,  G03F7/70033 ,  H01L22/12

Abstract: A monitoring system for manufacturing a semiconductor device comprises a source module, an optical module including a collector collecting and reflecting extreme ultraviolet generated light from the source module, an illumination optical system including a field facet mirror, and a projection optical system transferring the extreme ultraviolet light reflected from a reticle to a substrate. A calculating module calculates a degradation rate of the optical module, and a method comprises respectively generating a reference image profile and an (N)th image profile through the second sensor module by correcting the far field image of the extreme ultraviolet with respect to the intensity of the extreme ultraviolet at a reference time point and an (N)th time point after the reference time point, and calculating the degradation rate of the optical module by using a ratio of the reference image profile and the (N)th image profile by the calculation module.

公开(公告)号：US20210153332A1

公开(公告)日：2021-05-20

申请号：US16990059

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Injae LEE ,  Sunghyup KIM ,  Jeonggil KIM ,  Jinyong KIM ,  Hyuck SHIN ,  Sungho JANG ,  Inho CHOI

IPC: H05G2/00 ,  G03F7/20

Abstract: A droplet generator for extreme ultraviolet (EUV) exposure device includes a nozzle body with an inclined portion, the nozzle body with the inclined portion having a nozzle shape to discharge a target material in a liquid state, a gas supply pipe, at least a portion of the gas supply pipe being in an internal space of the nozzle body and of the inclined portion, and the gas supply pipe to discharge gas toward the target material in the liquid state, a target material supply unit connected to the nozzle body, the target material supply unit including a first valve, a gas supply unit connected to the gas supply pipe, the gas supply unit including a second valve, and a control unit connected to the first and second valves to control a supply amount of the target material and the gas.