公开(公告)号：US20180174958A1

公开(公告)日：2018-06-21

申请号：US15674878

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il OH ,  Jung-Ha OH ,  Hyuck-Joon KWON ,  Jong-Hyuk KIM ,  Jong-Moon YOON

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/485 ,  H01L23/58 ,  H01L23/482 ,  H01L23/14

CPC classification number: H01L23/5223 ,  H01L23/147 ,  H01L23/4824 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/585 ,  H01L24/00 ,  H01L28/87

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US20200144176A1

公开(公告)日：2020-05-07

申请号：US16582706

申请日：2019-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il OH ,  Jung-Ha OH ,  Hyuck-Joon KWON ,  Jong-Hyuk KIM ,  Jong-Moon YOON

IPC: H01L23/522 ,  H01L23/14 ,  H01L23/482 ,  H01L23/58 ,  H01L23/485 ,  H01L49/02 ,  H01L23/00 ,  H01L23/532

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US20200176980A1

公开(公告)日：2020-06-04

申请号：US16432962

申请日：2019-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Ho JEON ,  Jin-Hee PARK ,  Hyuck-Joon KWON

IPC: H02H9/04 ,  H02H1/00 ,  H03K3/3565

Abstract: An electrostatic protection circuit with variable Schmitt trigger characteristics is provided. The electrostatic protection circuit uses a Schmitt trigger circuit to protect an integrated circuit against an overvoltage. The Schmitt trigger circuit includes first and second branches bridged between a power supply rail and a ground rail. The Schmitt trigger circuit operates with a narrow hysteresis width when the second branch is connected in parallel to the first branch and with a wide hysteresis width when the second branch is not connected in parallel to the first branch. The electrostatic protection circuit discharges an overvoltage of the power supply rail using a narrow hysteresis width when a weak overvoltage is applied to the power supply rail, and discharges an overvoltage of the power supply rail using a wide hysteresis width when a strong overvoltage is applied to the power supply rail.