公开(公告)号：US20180277206A1

公开(公告)日：2018-09-27

申请号：US15795245

申请日：2017-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Kook PARK ,  Jung SUNWOO ,  Chi Weon YOON

IPC: G11C13/00

CPC classification number: G11C13/0038 ,  G11C13/0023 ,  G11C13/0033 ,  G11C13/0069 ,  G11C2213/71

Abstract: An operating method of a memory device is provided. Using a statistical model, a resistance Rdyn of a variable resistor of a memory cell and a variation ΔRdyn of the resistance Rdyn are determined. Based on the resistance Rdyn and the variation ΔRdyn of the resistance Rdyn, an average resistance Rdyn_avg and a beta value of the variable resistor are determined. Then, using the average resistance Rdyn_avg and the beta value, a resistance Ra of an insertion resistor, connected between the memory cell and a power supply generator for generating a power supply voltage VPGM, is determined.