公开(公告)号：US20180277206A1

公开(公告)日：2018-09-27

申请号：US15795245

申请日：2017-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Kook PARK ,  Jung SUNWOO ,  Chi Weon YOON

IPC: G11C13/00

CPC classification number: G11C13/0038 ,  G11C13/0023 ,  G11C13/0033 ,  G11C13/0069 ,  G11C2213/71

Abstract: An operating method of a memory device is provided. Using a statistical model, a resistance Rdyn of a variable resistor of a memory cell and a variation ΔRdyn of the resistance Rdyn are determined. Based on the resistance Rdyn and the variation ΔRdyn of the resistance Rdyn, an average resistance Rdyn_avg and a beta value of the variable resistor are determined. Then, using the average resistance Rdyn_avg and the beta value, a resistance Ra of an insertion resistor, connected between the memory cell and a power supply generator for generating a power supply voltage VPGM, is determined.

公开(公告)号：US20170269998A1

公开(公告)日：2017-09-21

申请号：US15377518

申请日：2016-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung SUNWOO

IPC: G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1072 ,  G06F11/1044 ,  G06F11/1068 ,  G11C29/52 ,  G11C2029/0411

Abstract: A method of operating a non-volatile memory device, includes, storing sensed data in a page buffer circuit by sensing data stored in a source page of a memory cell array, outputting the sensed data from the page buffer circuit, performing error correction code (ECC) decoding of the sensed data output from the page buffer circuit, storing the decoded data in the page buffer circuit, and providing de-randomized data to an external device as read data by performing de-randomizing of the decoded data output from the page buffer circuit using seed values corresponding to the source page.