公开(公告)号：US20130193545A1

公开(公告)日：2013-08-01

申请号：US13749178

申请日：2013-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Gyu Jeong ,  Young-Shin Kwon ,  Pyoung-Wan Kim ,  Seung-Kon Mok ,  Hyun-Su Jun

IPC: H01L31/0236 ,  H01L29/30

CPC classification number: H01L31/0236 ,  H01L27/14618 ,  H01L27/14683 ,  H01L29/30 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A semiconductor apparatus and a method of fabricating the same are provided. The semiconductor apparatus includes a body part having a first surface and a second surface facing each other, a first trench formed into the first surface of the body part, a second trench formed into the second surface of the body part, an opening connecting the first trench and the second trench to each other, a first adhesion enhancer, such as a rough surface, formed on a bottom surface of the first trench, and a second adhesion enhancer, such as a rough surface, formed on the second surface of the body part.

Abstract translation: 提供半导体装置及其制造方法。 该半导体装置包括具有第一表面和彼此面对的第二表面的主体部分，形成在主体部分的第一表面中的第一沟槽，形成在主体部分的第二表面中的第二沟槽，连接第一 沟槽和第二沟槽，形成在第一沟槽的底表面上的第一粘附增强剂，例如粗糙表面，以及形成在主体的第二表面上的第二粘附增强剂，例如粗糙表面 部分。