公开(公告)号：US10396035B2

公开(公告)日：2019-08-27

申请号：US15855289

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-mog Park

IPC: H01L27/11575 ,  H01L23/535 ,  H01L29/06 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11573

Abstract: A three-dimensional semiconductor device includes: a substrate having a cell array region and a contact region; a stacked structure including a plurality of electrodes and a plurality of electrode isolation insulating layers, which are alternately stacked on the substrate in a vertical direction, and having a stepwise structure on the contact region; vertical structures penetrating the stacked structure in the cell array region, each of the vertical structures constituting a cell string; and word line contact plugs, each penetrating an uppermost electrode among the plurality of electrodes in a region of each of tread portions of the stacked structure having the stepwise structure, being connected to another electrode under the penetrated uppermost electrode, and being electrically insulated from the penetrated uppermost electrode.

公开(公告)号：US20200150894A1

公开(公告)日：2020-05-14

申请号：US16532575

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-KIL LEE ,  Chang-kyu Seol ,  Dae-hyun Kim ,  Jin-min Kim ,  Hei-seung Kim ,  Hyun-mog Park ,  Hyun-sik Park ,  Hak-yong Lee

IPC: G06F3/06 ,  G11C11/56 ,  H01L25/18

Abstract: A storage device including: a memory controller configured to output user data received from outside of the storage device in a write operation mode and receive read data in a read operation mode; and a memory device including a memory cell array and a random input and output (I/O) engine, the random I/O engine configured to encode the user data provided from the memory controller using a random I/O code, in the write operation mode, and to generate the read data by decoding internal read data read by a data I/O circuit from the memory cell array using the random I/O code, in the read operation mode.