公开(公告)号：US20230223391A1

公开(公告)日：2023-07-13

申请号：US17972180

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinmyoung LEE ,  Hyungsoon JANG ,  Baekyoung KIM ,  Hyunah ROH ,  Jongsoo BAEK ,  Boyoung LEE

IPC: H01L27/02 ,  G06F30/392

CPC classification number: H01L27/0207 ,  G06F30/392

Abstract: A semiconductor device includes a substrate having first to fourth regions, first to third active regions and a first dummy active region extending on the first to fourth regions, respectively, a first gate structure intersecting the first active region on the first region and including a first gate conductive layer, a second gate structure intersecting the second active region on the second region and including a second gate conductive layer, a third gate structure intersecting the third active region on the third region find including a third gate conductive layer, a first dummy gate structure intersecting the first dummy active region on the fourth region and including a first dummy gate conductive layer, and source/drain regions on the first to third active regions and on both sides of the first to third gate structures.

公开(公告)号：US20170194493A1

公开(公告)日：2017-07-06

申请号：US15385060

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong KWON ,  Youngho LEE ,  Hoon LIM ,  Hyungsoon JANG ,  Eunguk CHUNG

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/11 ,  H01L29/16 ,  H01L27/092 ,  H01L29/08

CPC classification number: H01L29/7833 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L28/00 ,  H01L29/0852 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66681 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.