公开(公告)号：US10205020B2

公开(公告)日：2019-02-12

申请号：US15348586

申请日：2016-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongseok Lee ,  Jeongyun Lee ,  Gigwan Park ,  Keo Myoung Shin ,  Hyunji Kim ,  Sangduk Park

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8238 ,  H01L49/02 ,  H01L29/165

Abstract: A semiconductor device includes an active pattern having sidewalls defined by a device isolation pattern disposed on a substrate and an upper portion protruding from a top surface of the device isolation pattern, a liner insulating layer on the sidewalls of the active pattern, a gate structure on the active pattern, and source/drain regions at both sides of the gate structure. The liner insulating layer includes a first liner insulating layer and a second liner insulating layer having a top surface higher than a top surface of the first liner insulating layer. Each of the source/drain regions includes a first portion defined by the second liner insulating layer, and a second portion protruding upward from the second liner insulating layer and covering the top surface of the first liner insulating layer.

公开(公告)号：US20250071993A1

公开(公告)日：2025-02-27

申请号：US18605147

申请日：2024-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunji Kim ,  Sehee Jang ,  Jeehoon Han

IPC: H10B43/27 ,  H10B41/27

Abstract: The present disclosure relates to three-dimensional (3D) semiconductor memory devices and electronic systems. An example 3D semiconductor memory device comprises a substrate that includes a cell array region and a connection region, a structure in which a plurality of dielectric layers and a plurality of gate electrodes are alternately stacked on the substrate, a plurality of dummy vertical structures that extend through the structure on the connection region, and a gate contact that extends through the structure on the connection region and is connected to one gate electrode of the plurality of gate electrodes. The gate contact is between the plurality of dummy vertical structures in a plan view. The gate contact includes a first portion and a plurality of second portions that extend between the plurality of dummy vertical structures.