公开(公告)号：US20240244862A1

公开(公告)日：2024-07-18

申请号：US18405428

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Ju Hyun KIM ,  Yuho WON ,  Won Sik YOON ,  Taehyung KIM ,  Hyunju KIM

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/06 ,  H10K85/30

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/06 ,  H10K85/381 ,  H10K2101/40

Abstract: A light emitting device includes a first electrode and a second electrode facing each other, a light emitting layer disposed between the first electrode and the second electrode, and the light emitting layer including quantum dots, wherein the light emitting layer includes a first light emitting layer proximate to the first electrode and a second light emitting layer proximate to the second electrode, the quantum dots of the first light emitting layer include a first ligand on a surface, and the quantum dots of the second light emitting layer include a second ligand on a surface, the first ligand different from the second ligand, a HOMO energy level of the first light emitting layer is lower (shallower) than a HOMO energy level of the second light emitting layer.

公开(公告)号：US20250089252A1

公开(公告)日：2025-03-13

申请号：US18820966

申请日：2024-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongseon AHN ,  Hyunju KIM ,  Jaehwang SIM ,  Seulbi LEE

IPC: H10B43/27

Abstract: A semiconductor device includes a gate electrode structure, a memory channel structure, and a contact plug. The gate electrode structure includes gate electrodes sequentially stacked and spaced apart from each other on a substrate in a first direction perpendicular to an upper surface of the substrate. Each of the gate electrodes extends in a second direction substantially parallel to the upper surface of the substrate. The memory channel structure extends through the gate electrode structure. The contact plug extends partially through the gate electrode structure to contact an upper surface of a first gate electrode among the gate electrodes. The contact plug is electrically insulated from a second gate electrode that is over the first gate electrode. At least a portion of the contact plug has a width decreasing from a top toward a bottom thereof in the first direction in a stepwise manner.