公开(公告)号：US20220115397A1

公开(公告)日：2022-04-14

申请号：US17377869

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonseok CHO ,  Seulbi LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L25/18 ,  H01L25/065 ,  H01L21/762

Abstract: A semiconductor device including a substrate; a horizontal conductive layer disposed on the substrate; a support layer disposed on the horizontal conductive layer; a stack structure including a plurality of gate electrodes, stacked to be spaced apart from each other in a direction perpendicular to an upper surface of the support layer, and a plurality of interlayer insulating layers stacked alternately with the plurality of gate electrodes; a channel structure penetrating through the stack structure; a separation structure penetrating through the horizontal conductive layer, the support layer, and the stack structure and extending in a first direction; and a conductive pattern disposed on a level between the horizontal conductive layer and a lowermost interlayer insulating layer, among the plurality of interlayer insulating layers, and protruding outwardly of the separation structure from a side surface of the separation structure.

公开(公告)号：US20250089252A1

公开(公告)日：2025-03-13

申请号：US18820966

申请日：2024-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongseon AHN ,  Hyunju KIM ,  Jaehwang SIM ,  Seulbi LEE

IPC: H10B43/27

Abstract: A semiconductor device includes a gate electrode structure, a memory channel structure, and a contact plug. The gate electrode structure includes gate electrodes sequentially stacked and spaced apart from each other on a substrate in a first direction perpendicular to an upper surface of the substrate. Each of the gate electrodes extends in a second direction substantially parallel to the upper surface of the substrate. The memory channel structure extends through the gate electrode structure. The contact plug extends partially through the gate electrode structure to contact an upper surface of a first gate electrode among the gate electrodes. The contact plug is electrically insulated from a second gate electrode that is over the first gate electrode. At least a portion of the contact plug has a width decreasing from a top toward a bottom thereof in the first direction in a stepwise manner.