公开(公告)号：US20230361215A1

公开(公告)日：2023-11-09

申请号：US18133730

申请日：2023-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeom Kim ,  Daehong Ko ,  Jinbum Kim ,  Sangmoon Lee ,  Daeseop Byeon ,  Seran Park ,  Hyunsu Shin ,  Kiseok Lee ,  Chunghee Jo

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7851 ,  H01L29/66545 ,  H01L29/6656

Abstract: A semiconductor device including a substrate extending in a first direction and a second direction perpendicular to the first direction, a first active pattern protruding from a top surface of the substrate and extending in the first direction, an isolation pattern covering a sidewall of the first active pattern on the substrate, first silicon patterns spaced apart from each other in a third direction on the first active pattern, the third direction perpendicular to the first direction and second direction, a first source/drain layer extending in the third direction from a top surface of the first active pattern on the first active pattern, and in contact with sidewalls of the first silicon patterns, wherein a sidewall of the first source/drain layer in the second direction has a constant inclination with respect to the top surface of the substrate, and a gate structure extending in the second direction while filling a gap between the first silicon patterns on the substrate.