公开(公告)号：US20180096845A1

公开(公告)日：2018-04-05

申请号：US15595945

申请日：2017-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho Eun LEE ,  Jin Bum KIM ,  Kang Hun MOON ,  Jae Myung CHOE ,  Sun Jung KIM ,  Dong Suk SHIN ,  IL GYOU SHIN ,  Jeong Ho YOO

IPC: H01L21/02 ,  H01L21/223 ,  H01L29/66

CPC classification number: H01L21/02661 ,  H01L21/02071 ,  H01L21/223 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.