公开(公告)号：US20240145541A1

公开(公告)日：2024-05-02

申请号：US18313630

申请日：2023-05-08

申请人： Samsung Electronics Co., Ltd.

发明人： Da Hye KIM ,  Jin Bum KIM ,  Gyeom KIM ,  Young Kwang KIM ,  Kyung Bin CHUN

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device includes an active pattern including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction. The sheet patterns include an uppermost sheet pattern and a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction. Each of the plurality of gate structures includes a gate electrode and a gate insulating film and a source/drain pattern between adjacent ones of the plurality of gate structures. Each of inner gate structures includes a gate electrode and a gate insulating film. A semiconductor liner film includes silicon-germanium, and contacts the gate insulating film of each of the inner gate structures. A portion of the semiconductor liner film protrudes upwardly in the first direction beyond an upper surface of the uppermost sheet pattern.

公开(公告)号：US20180138269A1

公开(公告)日：2018-05-17

申请号：US15715832

申请日：2017-09-26

申请人： Samsung Electronics Co., Ltd.

发明人： Seok Hoon KIM ,  Hyun Jung LEE ,  Kyung Hee KIM ,  Sun Jung KIM ,  Jin Bum KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Cho Eun LEE ,  Dong Suk SHIN

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

摘要： There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.

公开(公告)号：US20180096845A1

公开(公告)日：2018-04-05

申请号：US15595945

申请日：2017-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Cho Eun LEE ,  Jin Bum KIM ,  Kang Hun MOON ,  Jae Myung CHOE ,  Sun Jung KIM ,  Dong Suk SHIN ,  IL GYOU SHIN ,  Jeong Ho YOO

IPC分类号： H01L21/02 ,  H01L21/223 ,  H01L29/66

CPC分类号： H01L21/02661 ,  H01L21/02071 ,  H01L21/223 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

公开(公告)号：US20240266288A1

公开(公告)日：2024-08-08

申请号：US18367851

申请日：2023-09-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin Bum KIM

IPC分类号： H01L23/528 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC分类号： H01L23/5286 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775

摘要： A semiconductor device is provided. The semiconductor device includes: a substrate including a first side and a second side opposite to the first side; an active pattern that is on the first side and extends in a first direction; an etch stop layer that extends along the first side of the substrate and does not extend along side faces of the active pattern; a field insulating film that is on the first side and covers at least a part of the side faces of the active pattern; a gate structure that extends in a second direction intersecting the first direction on the active pattern and the field insulating film; a through contact that extends in a third direction intersecting the first direction and the second direction and penetrates the field insulating film and the etch stop layer; a buried pattern connected to the through contact, inside the substrate; and a backside wiring structure that is on the second side and electrically connected to the buried pattern.

公开(公告)号：US20240153991A1

公开(公告)日：2024-05-09

申请号：US18229218

申请日：2023-08-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gyeom KIM ,  Da Hye KIM ,  Young Kwang KIM ,  Jin Bum KIM ,  Kyung Bin CHUN

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern; a gate structure disposed on the lower pattern; and a source/drain pattern disposed on the lower pattern, and connected to each of the plurality of sheet patterns, wherein the plurality of sheet patterns include a first sheet pattern and a second sheet pattern. The second sheet pattern is disposed between the first sheet pattern and the lower pattern. A first upper width of an upper surface of the first sheet pattern is greater than a first lower width of a bottom surface of the first sheet pattern, and a second upper width of an upper surface of the second sheet pattern is smaller than a second lower width of a bottom surface of the second sheet pattern.

公开(公告)号：US20170162674A1

公开(公告)日：2017-06-08

申请号：US15355781

申请日：2016-11-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin Bum KIM ,  Kang Hun MOON ,  Choeun LEE ,  Kyung Yub JEON ,  Sujin JUNG ,  Haegeon JUNG ,  Yang XU

IPC分类号： H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L29/08

CPC分类号： H01L29/66795 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device is disclosed. The method includes forming an active pattern protruding orthogonally from a substrate; forming a preliminary gate structure on the active pattern to cross the active pattern; etching the active pattern to form preliminary recess regions at both sides of the preliminary gate structure, wherein each of the preliminary recess regions is formed to define a delta region in an upper portion of the active pattern; forming a sacrificial layer on inner side surfaces and a bottom surface of the active pattern exposed by each of the preliminary recess regions; etching the delta regions and the sacrificial layer to form recess regions having a ‘U’-shaped section; and forming source/drain regions in the recess regions.

公开(公告)号：US20240006409A1

公开(公告)日：2024-01-04

申请号：US18138825

申请日：2023-04-25

申请人： Samsung Electronics Co., Ltd.

发明人： Dong Woo KIM ,  Jin Bum KIM ,  Sang Moon LEE

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L21/8234

摘要： There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.

公开(公告)号：US20230317849A1

公开(公告)日：2023-10-05

申请号：US17961818

申请日：2022-10-07

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum KIM ,  Hyo Jin KIM ,  Yong Jun NAM ,  Sang Moon LEE ,  Dong Woo KIM ,  In Geon HWANG

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7851 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/66545

摘要： A semiconductor device includes a lower pattern extending in a first direction, and protruding from a substrate in a second direction, a lower insulating pattern on the lower pattern, and in contact with an upper surface of the lower pattern, a channel pattern on the lower insulating pattern, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and a source/drain pattern disposed on the lower pattern, and connected to the channel pattern. A vertical level of a lowermost portion of the source/drain pattern is lower than a vertical level of a bottom surface of the lower insulating pattern. The gate electrode overlaps the lower insulating pattern in the second direction.

公开(公告)号：US20210013324A1

公开(公告)日：2021-01-14

申请号：US17038004

申请日：2020-09-30

申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

发明人： Jin Bum KIM ,  MunHyeon KIM ,  Hyoung Sub KIM ,  Tae Jin PARK ,  Kwan Heum LEE ,  Chang Woo NOH ,  Maria TOLEDANO LU QUE ,  Hong Bae PARK ,  Si Hyung LEE ,  Sung Man WHANG

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786

摘要： A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

公开(公告)号：US20230395668A1

公开(公告)日：2023-12-07

申请号：US18296329

申请日：2023-04-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Su Jin JUNG ,  Jin Bum KIM ,  In Gyu JANG

IPC分类号： H01L29/417 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L29/41733 ,  H01L29/0653 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/66553 ,  H01L29/0673 ,  H01L29/42392

摘要： A semiconductor device includes a substrate; an active pattern disposed on the substrate and extending in a first direction; a plurality of gate structures, wherein the plurality of gate structures is disposed on the active pattern and arranged in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and wherein the gate electrode extends in a second direction; a source/drain pattern disposed between adjacent gate structures of the plurality of gate structures; a source/drain contact connected to the source/drain pattern; and a contact silicide film disposed between the source/drain pattern and the source/drain contact, wherein the contact silicide film includes a bowl region that wraps a lower portion of the source/drain contact, and a protruding region that protrudes from the bowl region of the contact silicide film.