SEMICONDUCTOR MEMORY DEVICE AND REFRESH LEVERAGING DRIVING METHOD THEREOF
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND REFRESH LEVERAGING DRIVING METHOD THEREOF 有权
    半导体存储器件和刷新驱动方法

    公开(公告)号:US20140140154A1

    公开(公告)日:2014-05-22

    申请号:US14071757

    申请日:2013-11-05

    Abstract: A refresh leveraging driving method is provided which includes deciding a unit of word lines to be driven at a refresh leveraging operation to be the same as a redundancy repair row unit setting a lower row address of an input refresh leveraging address corresponding to the decided refresh leveraging row driving unit to a don't care state; and internally generating the don't care lower row address of the refresh leveraging address to drive word lines according to a combined refresh leveraging address.

    Abstract translation: 提供了一种刷新利用驱动方法,其包括将刷新利用操作中要驱动的字线的单位确定为与冗余修复行单元相同的冗余修复行单元,该冗余修复行单元设置与所决定的刷新利用相对应的输入刷新利用地址的较低行地址 行驱动单位到不关心状态; 并且根据组合的刷新利用地址在内部生成不关心刷新利用地址的较低行地址来驱动字线。

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