公开(公告)号：US20230096434A1

公开(公告)日：2023-03-30

申请号：US17704177

申请日：2022-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinduck PARK ,  Chansik KWON ,  Yongseong KIM ,  Inwook IM ,  Jiyeon HAN

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor chip includes a semiconductor substrate including a device region, and an edge region surrounding the device region, a device layer on the semiconductor substrate, a wiring layer on the device layer, a side surface of the wiring layer at least partially defining a recessed region that is in the edge region such that the side surface of the wiring layer is exposed by the recessed region, and an upper insulating layer on the wiring layer. The recessed region extends from a side surface of the device layer toward the device region. A first portion of the upper insulating layer covers the side surface of the wiring layer that is exposed by the recessed region.