公开(公告)号：US20240079329A1

公开(公告)日：2024-03-07

申请号：US18162920

申请日：2023-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUN SUNG KIM ,  JAE YOUNG CHOI ,  WONHYUK HONG ,  SEUNGCHAN YUN ,  JAEJIK BAEK ,  SEUNG MIN SONG ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/535

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/535

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.