公开(公告)号：US20240136354A1

公开(公告)日：2024-04-25

申请号：US18171754

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUMSEOK PARK ,  SOOYOUNG PARK ,  JAEJIK BAEK ,  KANG-ILL SEO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/786

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/78696

Abstract: Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. The first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. A lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.

公开(公告)号：US20240079329A1

公开(公告)日：2024-03-07

申请号：US18162920

申请日：2023-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUN SUNG KIM ,  JAE YOUNG CHOI ,  WONHYUK HONG ,  SEUNGCHAN YUN ,  JAEJIK BAEK ,  SEUNG MIN SONG ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/535

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/535

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

公开(公告)号：US20240063122A1

公开(公告)日：2024-02-22

申请号：US18147739

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGCHAN YUN ,  WONHYUK HONG ,  JAEJIK BAEK ,  EUN SUNG KIM ,  KANG-ILL SEO

IPC: H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L23/5286 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

Abstract: Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor including a channel region and a source/drain region contacting the channel region, a power rail that is configured be electrically connected to a power source and is spaced apart from the source/drain region in a first direction, and a power contact that is between the source/drain region and the power rail and contacts both the source/drain region and the power rail. The channel region may overlap the power contact in the first direction.