公开(公告)号：US20210334033A1

公开(公告)日：2021-10-28

申请号：US17090726

申请日：2020-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHYE CHO ,  KIJUN LEE ,  SUNG-RAE KIM ,  CHANKI KIM ,  YEONGGEOL SONG ,  YESIN RYU ,  JAEYOUN YOUN ,  MYUNGKYU LEE

IPC: G06F3/06

Abstract: A method for reading data from a memory includes; reading a codeword from the memory cells, correcting the errors when a number of errors in the codeword is less than a maximum number of correctable errors, correcting the errors when the number of errors in the codeword is equal to the maximum number of correctable errors and the errors correspond to a same sub-word line, and outputting signal indicating that the errors are an uncorrectable error when the number of errors of the codeword is equal to the maximum number of correctable errors and the errors correspond to different sub-word lines.

公开(公告)号：US20220238148A1

公开(公告)日：2022-07-28

申请号：US17722494

申请日：2022-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGCHEON KWON ,  SANGHYUK KWON ,  KYOMIN SOHN ,  JAEYOUN YOUN ,  HAESUK LEE

IPC: G11C11/406 ,  G11C11/408

Abstract: A memory device according to some aspects of the inventive concepts includes a memory cell array including a plurality of banks, at least one Processing Element (PE) connected to at least one bank selected from the plurality of banks, and a control logic configured to control an active operation in which wordlines included in each of the plurality of banks is activated, and configured to control a refresh operation in which at least one bank is refreshed, based on a PE enable signal configured to selectively enable the at least one PE.