公开(公告)号：US20230245864A1

公开(公告)日：2023-08-03

申请号：US17963704

申请日：2022-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： HAKYOUNG KIM ,  DOWON KIM ,  JISOO IM ,  YOUNGJIN NOH ,  Chulwoo PARK ,  MINYOUNG HUR

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/32642 ,  H01J2237/334

Abstract: Disclosed are plasma baffles, substrate processing apparatuses, and substrate processing methods. The plasma baffle comprises a lower ring, an upper ring outside the lower ring in a plan view and extending vertically, and an intermediate ring that extends from the lower ring to the upper ring to form an acute angle with respect to a horizontal direction. The lower ring includes a lower central hole that vertically penetrates a center of the lower ring, and a plurality of lower slits outside the lower central hole and vertically penetrating the lower ring. The intermediate ring provides an intermediate slit that connects an inner lateral surface of the intermediate ring to an outer lateral surface of the intermediate ring. An area ratio of the plurality of lower slits to the lower ring is equal to or greater than about 59%.