公开(公告)号：US20210028137A1

公开(公告)日：2021-01-28

申请号：US16795733

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： GWANGJAE JEON ,  DONGKYU KIM ,  JUNG-HO PARK ,  YEONHO JANG

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/498 ,  H01L23/31

Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern, a lower dielectric layer that covers a sidewall of the under-bump pattern, and a first redistribution pattern on the lower dielectric layer. The first redistribution pattern includes a first line part. A width at a top surface of the under-bump pattern is greater than a width at a bottom surface of the under-bump pattern. A thickness of the under-bump pattern is greater than a thickness of the first line part.

公开(公告)号：US20230420402A1

公开(公告)日：2023-12-28

申请号：US18244462

申请日：2023-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： GWANGJAE JEON ,  DONGKYU KIM ,  JUNG-HO PARK ,  YEONHO JANG

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L24/11 ,  H01L21/76885 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/05 ,  H01L23/3128 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/04105 ,  H01L2224/023 ,  H01L2224/0401

Abstract: Disclosed is a semiconductor package comprising a redistribution substrate, and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern, a lower dielectric layer that covers a sidewall of the under-bump pattern, and a first redistribution pattern on the lower dielectric layer. The first redistribution pattern includes a first line part. A width at a top surface of the under-bump pattern is greater than a width at a bottom surface of the under-bump pattern. A thickness of the under-bump pattern is greater than a thickness of the first line part.