公开(公告)号：US11877443B2

公开(公告)日：2024-01-16

申请号：US17355451

申请日：2021-06-23

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Won Ma ,  Ja Min Koo ,  Dae Young Moon ,  Kyu Wan Kim ,  Bong Hyun Kim ,  Young Seok Kim

IPC分类号： H10B12/00

CPC分类号： H10B12/485 ,  H10B12/37

摘要： A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.