公开(公告)号：US11158510B2

公开(公告)日：2021-10-26

申请号：US16393232

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd. ,  EO Technics Co., LTD

Inventor： Nam Hoon Lee ,  Ill Hyun Park ,  Tae Hee Han ,  Jin Won Ma ,  Byung Joo Oh ,  Bong Ju Lee ,  Jae Hee Lee ,  Joo Yong Lee ,  Nam Ki Cho ,  Chang Seong Hong

IPC: G01N21/25 ,  H01L21/268 ,  B23K26/354 ,  H01L21/67 ,  H01L21/66 ,  B23K26/03

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

公开(公告)号：US12219753B2

公开(公告)日：2025-02-04

申请号：US18538358

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won Ma ,  Ja Min Koo ,  Dae Young Moon ,  Kyu Wan Kim ,  Bong Hyun Kim ,  Young Seok Kim

IPC: H10B12/00

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US11877443B2

公开(公告)日：2024-01-16

申请号：US17355451

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won Ma ,  Ja Min Koo ,  Dae Young Moon ,  Kyu Wan Kim ,  Bong Hyun Kim ,  Young Seok Kim

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/37

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US11764064B2

公开(公告)日：2023-09-19

申请号：US17479256

申请日：2021-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon Lee ,  Ill Hyun Park ,  Tae Hee Han ,  Jin Won Ma ,  Byung Joo Oh ,  Bong Ju Lee ,  Jae Hee Lee ,  Joo Yong Lee ,  Nam Ki Cho ,  Chang Seong Hong

IPC: G01N21/25 ,  H01L21/268 ,  B23K26/354 ,  H01L21/67 ,  H01L21/66 ,  B23K26/03

CPC classification number: H01L21/268 ,  B23K26/032 ,  B23K26/354 ,  G01N21/25 ,  H01L21/67248 ,  H01L22/12

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.