公开(公告)号：US11877443B2

公开(公告)日：2024-01-16

申请号：US17355451

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won Ma ,  Ja Min Koo ,  Dae Young Moon ,  Kyu Wan Kim ,  Bong Hyun Kim ,  Young Seok Kim

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/37

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US20230197789A1

公开(公告)日：2023-06-22

申请号：US18169327

申请日：2023-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Kak Lee ,  Min Woo Kim ,  Bong Hyun Kim ,  Hee Young Park ,  Seo Jin Ahn ,  Won Yong Lee

IPC: H01L29/10 ,  H01L21/762 ,  H10B12/00

CPC classification number: H01L29/1083 ,  H01L21/76224 ,  H10B12/34 ,  H10B12/31

Abstract: A semiconductor device includes a trench defining an active region in a substrate, a first insulating layer on a bottom surface and side surfaces of the active region inside the trench, a shielding layer on a surface of the first insulating layer, the shielding layer including a plurality of spaced apart particles, a second insulating layer on the shielding layer and having first charge trapped therein, the plurality of spaced apart particles being configured to concentrate second charge having an opposite polarity to the charge trapped in the second insulating layer, and a gap-fill insulating layer on the second insulating layer in the trench.

公开(公告)号：US12219753B2

公开(公告)日：2025-02-04

申请号：US18538358

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won Ma ,  Ja Min Koo ,  Dae Young Moon ,  Kyu Wan Kim ,  Bong Hyun Kim ,  Young Seok Kim

IPC: H10B12/00

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US09496328B2

公开(公告)日：2016-11-15

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L27/108 ,  H01L49/02 ,  B05D1/00

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。

公开(公告)号：US11605714B2

公开(公告)日：2023-03-14

申请号：US16353750

申请日：2019-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Kak Lee ,  Min Woo Kim ,  Bong Hyun Kim ,  Hee Young Park ,  Seo Jin Ahn ,  Won Yong Lee

IPC: H01L29/40 ,  H01L29/10 ,  H01L21/762 ,  H01L27/108

Abstract: A semiconductor device includes a trench defining an active region in a substrate, a first insulating layer on a bottom surface and side surfaces of the active region inside the trench, a shielding layer on a surface of the first insulating layer, the shielding layer including a plurality of spaced apart particles, a second insulating layer on the shielding layer and having first charge trapped therein, the plurality of spaced apart particles being configured to concentrate second charge having an opposite polarity to the charge trapped in the second insulating layer, and a gap-fill insulating layer on the second insulating layer in the trench.

公开(公告)号：US20160043163A1

公开(公告)日：2016-02-11

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L49/02

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。