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公开(公告)号：US09496328B2
公开(公告)日：2016-11-15
申请号：US14682518
申请日：2015-04-09
发明人： Jong Bom Seo , Young Geun Park , Bong Hyun Kim , Sun Ho Kim , Hyun Jun Kim , Se Hyoung Ahn , Chang Mu An
IPC分类号： H01L27/108 , H01L49/02 , B05D1/00
CPC分类号： H01L28/90 , B05D1/60 , H01L27/10814 , H01L27/10852
摘要： A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.
摘要翻译： 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。
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公开(公告)号：US11877443B2
公开(公告)日：2024-01-16
申请号：US17355451
申请日：2021-06-23
发明人： Jin Won Ma , Ja Min Koo , Dae Young Moon , Kyu Wan Kim , Bong Hyun Kim , Young Seok Kim
IPC分类号： H10B12/00
CPC分类号： H10B12/485 , H10B12/37
摘要： A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.
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公开(公告)号：US20230197789A1
公开(公告)日：2023-06-22
申请号：US18169327
申请日：2023-02-15
发明人： Dong Kak Lee , Min Woo Kim , Bong Hyun Kim , Hee Young Park , Seo Jin Ahn , Won Yong Lee
IPC分类号： H01L29/10 , H01L21/762 , H10B12/00
CPC分类号： H01L29/1083 , H01L21/76224 , H10B12/34 , H10B12/31
摘要： A semiconductor device includes a trench defining an active region in a substrate, a first insulating layer on a bottom surface and side surfaces of the active region inside the trench, a shielding layer on a surface of the first insulating layer, the shielding layer including a plurality of spaced apart particles, a second insulating layer on the shielding layer and having first charge trapped therein, the plurality of spaced apart particles being configured to concentrate second charge having an opposite polarity to the charge trapped in the second insulating layer, and a gap-fill insulating layer on the second insulating layer in the trench.
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公开(公告)号：US11605714B2
公开(公告)日：2023-03-14
申请号：US16353750
申请日：2019-03-14
发明人： Dong Kak Lee , Min Woo Kim , Bong Hyun Kim , Hee Young Park , Seo Jin Ahn , Won Yong Lee
IPC分类号： H01L29/40 , H01L29/10 , H01L21/762 , H01L27/108
摘要： A semiconductor device includes a trench defining an active region in a substrate, a first insulating layer on a bottom surface and side surfaces of the active region inside the trench, a shielding layer on a surface of the first insulating layer, the shielding layer including a plurality of spaced apart particles, a second insulating layer on the shielding layer and having first charge trapped therein, the plurality of spaced apart particles being configured to concentrate second charge having an opposite polarity to the charge trapped in the second insulating layer, and a gap-fill insulating layer on the second insulating layer in the trench.
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公开(公告)号：US20160043163A1
公开(公告)日：2016-02-11
申请号：US14682518
申请日：2015-04-09
发明人： Jong Bom Seo , Young Geun Park , Bong Hyun Kim , Sun Ho Kim , Hyun Jun Kim , Se Hyoung Ahn , Chang Mu An
IPC分类号： H01L49/02
CPC分类号： H01L28/90 , B05D1/60 , H01L27/10814 , H01L27/10852
摘要： A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.
摘要翻译： 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。
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