公开(公告)号：US20240120177A1

公开(公告)日：2024-04-11

申请号：US18370268

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Mo LEE ,  Dong Hyeon NA ,  Myeong Soo SHIN ,  Woong Jin CHEON ,  Kyung-Sun KIM ,  Jae Bin KIM ,  Tae-Hwa KIM ,  Seung Bo SHIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32669 ,  H01L21/3065 ,  H01J2237/334

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.