公开(公告)号：US20240355583A1

公开(公告)日：2024-10-24

申请号：US18431163

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naohiko OKUNISHI ,  Hyeong Mo KANG ,  Nam Kyun KIM ,  Seong Sik NAM ,  Seung Bo SHIM

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52

CPC classification number: H01J37/32137 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32183 ,  H01J37/32541

Abstract: A plasma processing apparatus comprises a shower head configured to receive an electrode therein, and a variable impedance controller on the shower head. The variable impedance controller includes a first member spaced apart from the shower head and arranged along a circumference of the shower head, and a second member on the first member and configured to rotate. The variable impedance controller is configured to control an impedance by changing the impedance resulting from the first member and the second member as at least one contact point between the first member and the second member is changed according to rotation of the second member.

公开(公告)号：US20240120177A1

公开(公告)日：2024-04-11

申请号：US18370268

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Mo LEE ,  Dong Hyeon NA ,  Myeong Soo SHIN ,  Woong Jin CHEON ,  Kyung-Sun KIM ,  Jae Bin KIM ,  Tae-Hwa KIM ,  Seung Bo SHIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/32669 ,  H01L21/3065 ,  H01J2237/334

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

公开(公告)号：US20230120474A1

公开(公告)日：2023-04-20

申请号：US17750653

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyun KIM ,  Seung Bo SHIM ,  Doug Yong SUNG ,  Seung Han BAEK ,  Ju Ho LEE

IPC: H01J37/32

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

公开(公告)号：US20180366304A1

公开(公告)日：2018-12-20

申请号：US15867188

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo SHIM ,  Nam Jun KANG ,  Se Kwon NA ,  Je-Hun WOO ,  Seung Kyu LIM ,  Ji Soo IM

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus and a method for fabricating a semiconductor device using the same are provided. The plasma processing apparatus includes: a chuck stage configured to support a wafer thereon; a dielectric ring configured to surround a periphery of the chuck stage, the dielectric ring including a paraelectric material; and a dielectric constant controller configured to control a dielectric constant of the dielectric ring.

公开(公告)号：US20190006150A1

公开(公告)日：2019-01-03

申请号：US15864529

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo SHIM ,  Myung Sun CHOI ,  Nam Jun KANG ,  Doug Yong SUNG ,  Sang Min JEONG ,  Peter Byung H HAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A semiconductor manufacturing device includes a plasma chamber, a source power supply, and first and second bias power supplies. The source power supply applies a first source voltage to the plasma chamber at a first time and a second source voltage to the plasma chamber at a second time. The first bias power supply applies a first turn-on voltage to the plasma chamber at the first time and a first turn-off voltage to the plasma chamber at the second time. The second bias power supply applies a second turn-off voltage to the plasma chamber at the first time and a second turn-on voltage to the plasma chamber at the second time. The plasma chamber forms plasmas of different conditions from a gas mixture in the plasma chamber based on the source, turn-on, and turn-off voltages.

公开(公告)号：US20180182647A1

公开(公告)日：2018-06-28

申请号：US15672623

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Jin NOH ,  Kyung Sun KIM ,  Seung Bo SHIM ,  Yong Woo LEE ,  Ji Soo IM ,  Won Young CHOI

IPC: H01L21/67 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32642 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68735

Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.