公开(公告)号：US20240405041A1

公开(公告)日：2024-12-05

申请号：US18639136

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Ho KIM ,  Hyeyun PARK ,  Gijae KANG ,  Seonghoon KO ,  Jin Soak KIM ,  Wook LEE ,  Joohyun JEON ,  Guhyun KWON

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

公开(公告)号：US20230352509A1

公开(公告)日：2023-11-02

申请号：US18067393

申请日：2022-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonghoon KO ,  Jae Ho KIM ,  Uihui KWON ,  Wook LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683

Abstract: An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.