公开(公告)号：US20240014241A1

公开(公告)日：2024-01-11

申请号：US18331343

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook LEE ,  Seonghoon KO ,  Jaeho KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/14603

Abstract: An image sensor includes a dual vertical gate including two vertical portions apart from each other by an isolation area in a first direction and vertically extending into a substrate, a connection portion configured to connect the two vertical portions to each other on the two vertical portions, and a device isolation layer on side surfaces of the vertical portions in the first direction, wherein each of the two vertical portions includes an upper vertical portion and a lower vertical portion, a sidewall of the upper vertical portion forms a first inclination angle with a line extending in the first direction, a sidewall of the lower vertical portion forms a second inclination angle with the line extending in the first direction, and the first inclination angle is different from the second inclination angle.

公开(公告)号：US20160172486A1

公开(公告)日：2016-06-16

申请号：US14964758

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhwan KIM ,  Jaehyun JUNG ,  Jungkyung KIM ,  Kyuok LEE ,  Jaejune JANG ,  Changki JEON ,  Suyeon CHO ,  Seonghoon KO ,  Kyu-Heon CHO

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

Abstract translation: 半导体器件包括具有第一导电类型的半导体衬底，具有第二导电类型的外延层，外延层中的限定半导体衬底的有源区的隔离区，具有第一导电类型的体区和漂移 在外延层中具有彼此相邻的第二导电类型的区域，漂移区域中的LOCOS绝缘层并被漂移区域包围，与LOCOS绝缘层的侧部相邻并被漂移区域包围的漏极区域， 身体接触区域和身体区域中的源区域，并且被身体区域包围，以及从身体区域的方向与漂移区域和LOCOS绝缘层的一部分重叠的门区域。

公开(公告)号：US20240405041A1

公开(公告)日：2024-12-05

申请号：US18639136

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Ho KIM ,  Hyeyun PARK ,  Gijae KANG ,  Seonghoon KO ,  Jin Soak KIM ,  Wook LEE ,  Joohyun JEON ,  Guhyun KWON

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.

公开(公告)号：US20230352509A1

公开(公告)日：2023-11-02

申请号：US18067393

申请日：2022-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonghoon KO ,  Jae Ho KIM ,  Uihui KWON ,  Wook LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683

Abstract: An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.