公开(公告)号：US20240014241A1

公开(公告)日：2024-01-11

申请号：US18331343

申请日：2023-06-08

申请人： Samsung Electronics Co., Ltd.

发明人： Wook LEE ,  Seonghoon KO ,  Jaeho KIM

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/14603

摘要： An image sensor includes a dual vertical gate including two vertical portions apart from each other by an isolation area in a first direction and vertically extending into a substrate, a connection portion configured to connect the two vertical portions to each other on the two vertical portions, and a device isolation layer on side surfaces of the vertical portions in the first direction, wherein each of the two vertical portions includes an upper vertical portion and a lower vertical portion, a sidewall of the upper vertical portion forms a first inclination angle with a line extending in the first direction, a sidewall of the lower vertical portion forms a second inclination angle with the line extending in the first direction, and the first inclination angle is different from the second inclination angle.

公开(公告)号：US20230352509A1

公开(公告)日：2023-11-02

申请号：US18067393

申请日：2022-12-16

申请人： Samsung Electronics Co., Ltd.

发明人： Seonghoon KO ,  Jae Ho KIM ,  Uihui KWON ,  Wook LEE

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683

摘要： An image sensor includes a substrate including first and second pixel regions adjacent to each other, the substrate including first and second surfaces opposite to each other, a pixel isolation pattern in the substrate to define the first and second pixel regions, a transfer gate on the first surface of the substrate of the first pixel region, a floating diffusion region adjacent to a side of the transfer gate, a first ground dopant region adjacent to the first surface of the substrate in the first pixel region, and a second ground dopant region adjacent to the first surface of the substrate in the second pixel region. A bottom surface of the first ground dopant region is located at a lower level than a bottom surface of the floating diffusion region.

公开(公告)号：US20160172486A1

公开(公告)日：2016-06-16

申请号：US14964758

申请日：2015-12-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Minhwan KIM ,  Jaehyun JUNG ,  Jungkyung KIM ,  Kyuok LEE ,  Jaejune JANG ,  Changki JEON ,  Suyeon CHO ,  Seonghoon KO ,  Kyu-Heon CHO

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/402 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

摘要： A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

摘要翻译： 半导体器件包括具有第一导电类型的半导体衬底，具有第二导电类型的外延层，外延层中的限定半导体衬底的有源区的隔离区，具有第一导电类型的体区和漂移 在外延层中具有彼此相邻的第二导电类型的区域，漂移区域中的LOCOS绝缘层并被漂移区域包围，与LOCOS绝缘层的侧部相邻并被漂移区域包围的漏极区域， 身体接触区域和身体区域中的源区域，并且被身体区域包围，以及从身体区域的方向与漂移区域和LOCOS绝缘层的一部分重叠的门区域。