公开(公告)号：US20240405041A1

公开(公告)日：2024-12-05

申请号：US18639136

申请日：2024-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Ho KIM ,  Hyeyun PARK ,  Gijae KANG ,  Seonghoon KO ,  Jin Soak KIM ,  Wook LEE ,  Joohyun JEON ,  Guhyun KWON

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a photoelectric conversion region, a semiconductor pattern on the substrate, a gate electrode on the semiconductor pattern, and a gate insulating layer between the semiconductor pattern and the gate electrode. The semiconductor pattern includes a first sub pattern including a first source/drain region, a second sub pattern including a second source/drain region, and a third sub pattern between the first sub pattern and the second sub pattern. The gate electrode is on the third sub pattern. The first sub pattern, the second sub pattern, and the third sub pattern extend along different directions.