公开(公告)号：US20220093796A1

公开(公告)日：2022-03-24

申请号：US17542969

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyujin KIM ,  Hui-Jung KIM ,  Junsoo KIM ,  Sangho LEE ,  Jae-Hwan CHO ,  Yoosang HWANG

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/311 ,  H01L27/108 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.

公开(公告)号：US20210005506A1

公开(公告)日：2021-01-07

申请号：US16722622

申请日：2019-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyujin KIM ,  Hui-Jung KIM ,  Junsoo KIM ,  Sangho LEE ,  Jae-Hwan CHO ,  Yoosang HWANG

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L27/108

Abstract: A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.