公开(公告)号：US09620511B2

公开(公告)日：2017-04-11

申请号：US14267909

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-goo Lee ,  Young-woo Park ,  Jin-taek Park

IPC: H01L29/66 ,  H01L21/336 ,  H01L27/112 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L23/5226 ,  H01L27/11273 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/785 ,  H01L29/7889 ,  H01L29/7926

Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

公开(公告)号：US09899412B2

公开(公告)日：2018-02-20

申请号：US15464983

申请日：2017-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-goo Lee ,  Young-woo Park ,  Jin-taek Park

IPC: H01L29/66 ,  H01L21/336 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/522

CPC classification number: H01L27/11582 ,  H01L23/5226 ,  H01L27/11273 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/785 ,  H01L29/7889 ,  H01L29/7926

Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

公开(公告)号：US20170194347A1

公开(公告)日：2017-07-06

申请号：US15464983

申请日：2017-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-goo Lee ,  Young-woo Park ,  Jin-taek Park

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L23/5226 ,  H01L27/11273 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/785 ,  H01L29/7889 ,  H01L29/7926

Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.