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1.
公开(公告)号:US11101267B2
公开(公告)日:2021-08-24
申请号:US16444252
申请日:2019-06-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-young Lim , Jae-ho Park , Sang-hoon Baek , Hyeon-gyu You , Dal-hee Lee
IPC: H01L27/088 , H01L23/535 , H01L29/06 , H01L27/092 , H01L27/02 , H01L21/8234 , H02M7/00
Abstract: Provided is an integrated circuit including: at least one active region extending in a first row in a first direction; at least one active region extending in a second row in the first direction; and a multiple height cell including the at least one active region in the first row, the at least one active region in the second row, at least one gate line extending in a second direction crossing the first direction, wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.
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公开(公告)号:US09852252B2
公开(公告)日:2017-12-26
申请号:US14801239
申请日:2015-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-hoon Baek , Tae-joong Song , Jae-ho Park , Gi-young Yang , Jin-tae Kim , Hyo-sig Won
IPC: G06F17/50
CPC classification number: G06F17/5072 , G06F17/5031 , G06F17/5077 , G06F2217/84
Abstract: A standard cell library and a method of using the same may include information regarding a plurality of standard cells stored on a non-transitory computer-readable storage medium, wherein at least one of the plurality of standard cells includes a pin through which an input signal or an output signal of the at least one standard cell passes and including first and second regions perpendicular to a stack direction. When the via is disposed in the pin, the second region can provide a resistance value of the via smaller than that of the first region. The standard cell library may further include marker information corresponding to the second region.
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3.
公开(公告)号:US20200051977A1
公开(公告)日:2020-02-13
申请号:US16444252
申请日:2019-06-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jin-young Lim , Jae-ho Park , Sang-hoon Baek , Hyeon-gyu You , Dal-hee Lee
IPC: H01L27/088 , H01L29/06 , H01L23/535
Abstract: Provided is an integrated circuit including: at least one active region extending in a first row in a first direction; at least one active region extending in a second row in the first direction; and a multiple height cell including the at least one active region in the first row, the at least one active region in the second row, at least one gate line extending in a second direction crossing the first direction, wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.
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公开(公告)号:US20160055284A1
公开(公告)日:2016-02-25
申请号:US14801239
申请日:2015-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-hoon Baek , Tae-joong Song , Jae-ho Park , Gi-young Yang , Jin-tae Kim , Hyo-sig Won
IPC: G06F17/50
CPC classification number: G06F17/5072 , G06F17/5031 , G06F17/5077 , G06F2217/84
Abstract: A standard cell library and a method of using the same may include information regarding a plurality of standard cells stored on a non-transitory computer-readable storage medium, wherein at least one of the plurality of standard cells includes a pin through which an input signal or an output signal of the at least one standard cell passes and including first and second regions perpendicular to a stack direction. When the via is disposed in the pin, the second region can provide a resistance value of the via smaller than that of the first region. The standard cell library may further include marker information corresponding to the second region.
Abstract translation: 标准单元库及其使用方法可以包括关于存储在非暂时计算机可读存储介质上的多个标准单元的信息,其中多个标准单元中的至少一个包括一个引脚,通过该引脚输入信号 或者至少一个标准单元的输出信号通过并包括垂直于堆叠方向的第一和第二区域。 当通孔设置在销中时,第二区域可以提供通孔的电阻值小于第一区域的电阻值。 标准单元库还可以包括对应于第二区域的标记信息。
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