公开(公告)号：US20240387597A1

公开(公告)日：2024-11-21

申请号：US18390713

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan LEE ,  Jeongsoon KANG ,  Gyunha PARK ,  Jongeun PARK ,  Dongseok CHO

IPC: H01L27/146 ,  H04N25/63

Abstract: An image sensor includes a first structure and a second structure, each having at least one pixel and sequentially stacked in a vertical direction. Each of the pixels may include a photodiode portion, provided in the first structure, and a pixel circuit portion connected to the photodiode portion provided in the first structure.

公开(公告)号：US20180197919A1

公开(公告)日：2018-07-12

申请号：US15659343

申请日：2017-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Suk LEE ,  Kwang-Min LEE ,  Gwideok Ryan LEE ,  Masaru ISHll ,  Tae Yon LEE

IPC: H01L27/30 ,  H01L27/28 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L27/281 ,  H01L27/286 ,  H01L51/442 ,  Y02E10/549

Abstract: Image sensors according to some embodiments of the inventive concepts may include a pixel array are including a plurality of pixels, a peripheral area adjacent the pixel array unit, and an organic photoelectric converting layer including a first portion positioned on the pixel area and a second portion positioned on the peripheral area. The second portion may be separated from the first portion.

公开(公告)号：US20210337155A1

公开(公告)日：2021-10-28

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae CHU ,  Gwideok Ryan LEE ,  Taeyon LEE ,  Jaehoon JEON

IPC: H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.

公开(公告)号：US20200161348A1

公开(公告)日：2020-05-21

申请号：US16418557

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwideok Ryan LEE ,  Taeyon LEE ,  Sangchun PARK

IPC: H01L27/146 ,  H01L31/032 ,  H01L29/417 ,  H01L29/786 ,  H04N5/374

Abstract: An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.

公开(公告)号：US20240250104A1

公开(公告)日：2024-07-25

申请号：US18416388

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyunha PARK ,  Jeongsoon KANG ,  Jongeun PARK ,  Gwideok Ryan LEE ,  Dongseok CHO

IPC: H01L27/146 ,  H01L23/00 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H04N25/79

Abstract: Provided is an image sensor including a first structure and a second structure stacked in a vertical direction, wherein the first structure includes a first pixel region, a photoelectric conversion unit in the first pixel region, a floating diffusion region in the first pixel region, a first interlayer insulating layer on the floating diffusion region, and a first pixel pad electrically connected to the floating diffusion region, and the second structure includes a second pixel region, a source-follower transistor in the second pixel region, a second interlayer insulating layer on the source-follower transistor, and a second pixel pad electrically connected to a gate of the source-follower transistor, and the image sensor includes a coupling prevention line arranged around the first and second pixel pads and electrically connected to the source region of the source-follower transistor.

公开(公告)号：US20220077237A1

公开(公告)日：2022-03-10

申请号：US17386821

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan LEE ,  Jaekyu LEE

IPC: H01L27/30

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first transmission gate electrode on the first surface of the substrate, a storage node on the first surface of the substrate and including a first storage gate electrode isolated from direct contact with the first transmission gate electrode, a dielectric layer on the first storage gate electrode, and a semiconductor layer on the dielectric layer. The image sensor may include a first cover insulating layer on the semiconductor layer and vertically overlapping the first transmission gate electrode, and an organic photoelectric conversion layer on an upper surface of the semiconductor layer and an upper surface of the first cover insulating layer.

公开(公告)号：US20210175286A1

公开(公告)日：2021-06-10

申请号：US17034316

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchun PARK ,  Kwansik KIM ,  Hongki KIM ,  Sangsu PARK ,  Beomsuk LEE ,  Taeyon LEE ,  Gwideok Ryan LEE

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel, region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels, An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.