公开(公告)号：US20180301509A1

公开(公告)日：2018-10-18

申请号：US15787846

申请日：2017-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masaru ISHII ,  GwideokRyan LEE ,  Taeyon LEE

IPC: H01L27/30 ,  H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

公开(公告)号：US20150380453A1

公开(公告)日：2015-12-31

申请号：US14852016

申请日：2015-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HyunSeok LEE ,  Jung-Kyu JUNG ,  Yoondong PARK ,  Taeyon LEE

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14601 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14627 ,  H01L31/02327 ,  H01L31/09 ,  H04N5/332 ,  H04N5/3745

Abstract: A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.

Abstract translation: 光电检测器可以具有包括导电图案和介于导电图案之间的中间层的结构。 与第一导电图案和中间层重叠的第二导电图案的至少一侧的长度L满足方程L =λ/ 2neff，其中neff是由第一导电图案形成的表面等离子体波导的有效折射率 图案，中间层和第二导电图案。 当具有波长λ的电磁波入射时，在中间层产生的热产生电流变化。

公开(公告)号：US20210175286A1

公开(公告)日：2021-06-10

申请号：US17034316

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchun PARK ,  Kwansik KIM ,  Hongki KIM ,  Sangsu PARK ,  Beomsuk LEE ,  Taeyon LEE ,  Gwideok Ryan LEE

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel, region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels, An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

公开(公告)号：US20140124782A1

公开(公告)日：2014-05-08

申请号：US14073079

申请日：2013-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-kyu JUNG ,  Taeyon LEE ,  Yoondong PARK ,  Hyunseok LEE

IPC: H01L31/02 ,  H01L31/032

CPC classification number: H01L31/0324 ,  H01L27/14665 ,  H01L31/02164 ,  H01L31/109

Abstract: An image sensor may include a first layer on a substrate and including a chalcogenide-containing material, and a detection part connected to the first layer and configured to detect a variation in electric characteristics of the first layer. The chalcogenide-containing material may include one of AxByS1-x-y, AxByTe1-x-y, and AxBySe1-x-y, where 0

Abstract translation: 图像传感器可以包括在基板上的第一层，并且包括含硫族化物的材料，以及连接到第一层并被配置为检测第一层的电特性的变化的检测部。 含硫族化物的材料可以包括AxByS1-xy，AxByTe1-xy和AxBySe1-xy中的一种，其中0

公开(公告)号：US20230030824A1

公开(公告)日：2023-02-02

申请号：US17835090

申请日：2022-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Jeong LIM ,  Seungjun LEE ,  Taeyon LEE

IPC: H01L27/30

Abstract: An image sensor includes a plurality of pixels including a blue pixel, a green pixel, and a red pixel. At least a portion of the plurality of pixels includes a first photo-sensing device including a first perovskite which absorbs at least a portion of light in a visible light wavelength spectrum, and a second photo-sensing device which is stacked with the first photo-sensing device and senses at least a portion of light in an infrared wavelength spectrum.

公开(公告)号：US20210337155A1

公开(公告)日：2021-10-28

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae CHU ,  Gwideok Ryan LEE ,  Taeyon LEE ,  Jaehoon JEON

IPC: H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.

公开(公告)号：US20200161348A1

公开(公告)日：2020-05-21

申请号：US16418557

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwideok Ryan LEE ,  Taeyon LEE ,  Sangchun PARK

IPC: H01L27/146 ,  H01L31/032 ,  H01L29/417 ,  H01L29/786 ,  H04N5/374

Abstract: An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.

公开(公告)号：US20140159128A1

公开(公告)日：2014-06-12

申请号：US14092257

申请日：2013-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HyunSeok LEE ,  Jung-Kyu JUNG ,  Yoondong PARK ,  Taeyon LEE

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14601 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14627 ,  H01L31/02327 ,  H01L31/09 ,  H04N5/332 ,  H04N5/3745

Abstract: A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=λ/2neff, wherein the neff is an effective refractive index of a surface plasmon waveguide mode by a surface plasmon resonance formed of the first conductive pattern, the intermediate layer, and the second conductive pattern. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength λ is incident thereon generates a current variation.

Abstract translation: 光电检测器可以具有包括导电图案和介于导电图案之间的中间层的结构。 与第一导电图案和中间层重叠的第二导电图案的至少一侧的长度L满足等式L =λ/ 2neff，其中neff是表面等离子体激元的表面等离子体波导模式的有效折射率 由第一导电图案，中间层和第二导电图案形成的共振。 当具有波长λ的电磁波入射时，在中间层产生的热产生电流变化。