公开(公告)号：US11776858B2

公开(公告)日：2023-10-03

申请号：US16798575

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsung Lee ,  Suhong Kim ,  Youngwon Shin ,  Hyungchul Cho ,  Jaehyoung Lee ,  Hyunjae Jung

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/305 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L22/20 ,  H01J37/3053 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67253

Abstract: A method of manufacturing a semiconductor device includes preparing etched mapping data by measuring an etching amount of a wafer subjected to an etching process, determining an error region in which the etching amount of the wafer is outside of a reference value, based on the etched mapping data, compensating distribution of an electrical field applied to the wafer, and compensating exhaust distribution of a process gas, changed by the compensating distribution of an electrical field.