公开(公告)号：US20240310720A1

公开(公告)日：2024-09-19

申请号：US18535149

申请日：2023-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeil Lee ,  Kyoungcho Na

IPC: G03F1/70

CPC classification number: G03F1/70 ,  G03F7/2004

Abstract: An overlay correction method capable of accurately measuring and correcting higher-order components of an overlay of a first layer in which a pattern is first formed on a semiconductor substrate, and improving matching with exposure equipment in a subsequent exposure process is disclosed. The overlay correction method includes forming a first overlay mark on a first layer on which a pattern is initially formed on a semiconductor substrate, performing an absolute measurement on the first overlay mark, and correcting an overlay of the first layer based on the absolute measurement. The absolute measurement is a measurement method based on a fixed position of exposure equipment used to form the first overlay mark.

公开(公告)号：US09932412B2

公开(公告)日：2018-04-03

申请号：US14069091

申请日：2013-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-kyung Kim ,  JungWook Lee ,  SuJeong Hwang ,  Jaeil Lee

IPC: C07K16/46 ,  C07K16/22 ,  C07K16/28

CPC classification number: C07K16/468 ,  C07K16/22 ,  C07K16/2863 ,  C07K2317/569 ,  C07K2319/50

Abstract: A bispecific antigen binding protein complex comprising a first polypeptide comprising a first antigen binding site at an N terminus; a second polypeptide comprising a second antigen binding site at an N terminus; and a linker connecting the first polypeptide and the second polypeptide; wherein the linker comprises a tag at one terminus thereof, and wherein the tag is connected to a C-terminus of the first polypeptide or to an N-terminus of the second polypeptide, and comprises a cleavable amino acid sequence; as well as related compositions and methods.

公开(公告)号：US20230074537A1

公开(公告)日：2023-03-09

申请号：US17658527

申请日：2022-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeil Lee ,  Kyoungcho Na

IPC: G03F7/20 ,  H01L21/66

Abstract: An overlay measurement method for accurately measuring and correcting an overlay in an environment in which a deep ultraviolet (DUV) apparatus and an extreme ultraviolet (EUV) apparatus are used together, a semiconductor device manufacturing method using the overlay measurement method, and an overlay measurement apparatus are provided. The overlay measurement method includes performing an absolute measurement of a position of an overlay mark of at least one of a plurality of layers, based on a fixed position, wherein an exposure process is performed on a first layer of the plurality of layers by using the DUV apparatus, and an exposure process is performed on an nth layer of the plurality of layers, which is an uppermost layer of the plurality of layers, by using the EUV apparatus.