公开(公告)号：US11424202B2

公开(公告)日：2022-08-23

申请号：US16674056

申请日：2019-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bowo Choi ,  Youngtak Kim ,  Sangjine Park ,  Suji Kim ,  Jaeuk Shin ,  Hyunjung Lee ,  Jihun Cheon

IPC: H01L27/108 ,  H01L23/00

Abstract: A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

公开(公告)号：US11217748B2

公开(公告)日：2022-01-04

申请号：US16807245

申请日：2020-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtak Kim ,  Sangjine Park ,  Wonjun Lee ,  Hyeyeong Seo ,  Jaeuk Shin

IPC: H01L45/00

Abstract: A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.