Semiconductor devices having landing pads

    公开(公告)号:US11424202B2

    公开(公告)日:2022-08-23

    申请号:US16674056

    申请日:2019-11-05

    Abstract: A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

    Method and apparatus with neural codec

    公开(公告)号:US12244793B2

    公开(公告)日:2025-03-04

    申请号:US18351009

    申请日:2023-07-12

    Abstract: A neural codec includes a first simulated predictor for predicting a first block corresponding to a target block within a current frame, wherein the first block is predicted in accordance with the target block of the to-be-predicted current frame and pixels of neighbor blocks adjacent to the target block being input to the first simulated predictor, a second simulated predictor for predicting a second block corresponding to a target block using a reference block of a frame determined based on a prediction mode, wherein the second block is predicted in accordance with the reference block of a reference frame adjacent to the current frame and the target block being input to the second simulated predictor, and a selection network configured to select, based on the prediction mode, one of the first block and the second block as a predicted block.

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