公开(公告)号：US10153397B2

公开(公告)日：2018-12-11

申请号：US15689220

申请日：2017-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-seok Choi ,  Min-ho Kim ,  Jeong-wook Lee ,  Jai-won Jean ,  Chul-min Kim ,  Jae-deok Jeong ,  Min-hwan Kim ,  Jang-mi Kim

IPC: H01L33/14 ,  H01L33/06 ,  H01L27/15 ,  H01L33/32 ,  H01L33/02 ,  H01L33/30

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.