公开(公告)号：US11908895B2

公开(公告)日：2024-02-20

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

CPC classification number: H01L29/0821 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

公开(公告)号：US20220231126A1

公开(公告)日：2022-07-21

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.