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公开(公告)号：US12064907B2
公开(公告)日：2024-08-20
申请号：US17283888
申请日：2019-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsu Kim , Sangsik Na , Rathore Pranveer Singh , Youngjin Yi , Jongbae Jeon , Donghyeon Hwang , Hangyu Hwang , Jinhyeong Park , Youngik Son
CPC classification number: B29C45/14336 , H05K5/0017 , H05K5/04 , B29C2793/009 , B29L2031/34
Abstract: A method for manufacturing an electronic device, according to one embodiment of the present invention, may comprise the operations of: inserting and injecting a polymeric material into a structure, which is a plate-shaped metal structure comprising a first surface and a second surface, the structure comprising: at least one opening penetrating the first surface and the second surface; and at least one recess having a first depth from the first surface and extending to have a repeating pattern selected from among a W-shape, a sawtooth shape, and a straight line shape, when viewed from above the first surface; and confirming that the recess is filled with the polymeric material. Various other embodiments are possible.
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公开(公告)号：US20210175226A1
公开(公告)日：2021-06-10
申请号：US16986533
申请日：2020-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sungjun Song , Hyunkwang Jeong , Changsu Kim , Chanhee Jeon
IPC: H01L27/02
Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.
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公开(公告)号：US11464119B2
公开(公告)日：2022-10-04
申请号：US16766167
申请日：2019-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsu Kim , Hangyu Hwang , Sangsik Na , Jongbae Jeon , Pranveer Singh Rathore , Ingook Hong
IPC: H05K5/00 , B29C45/26 , H04B1/3827 , B29L31/34
Abstract: An electronic device according to various embodiments of the present disclosure includes a housing including a front plate facing a first direction, a rear plate facing a second direction that is opposite to the first direction, and side members for encompassing the inner space between the front plate and the rear plate; a display shown through at least a portion of the front plate; and a middle plate positioned between the front plate and the rear plate. The middle plate can include a first portion disposed between the front plate and the side members, when viewed from the outside of the housing. The first portion can include: a first surface supporting a portion of the front plate and facing the first direction; a second surface exposed to the outside of the housing; a third surface facing a third direction that is different from the first direction and the second direction, and facing the side surface of the front plate; and a protruding part protruding in the third direction on the third surface.
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公开(公告)号：US11432630B2
公开(公告)日：2022-09-06
申请号：US17252881
申请日：2019-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jongbae Jeon , Changsu Kim , Sangsik Na , Pranveer Singh Rathore , Hangyu Hwang
Abstract: A cover device according to an embodiment of the present invention, may include a first plate including a first surface and a second surface facing away from the first surface, and being substantially rectangular, the first plate including a first edge having a first length and extending in a first direction, a second edge having a second length longer than the first length and extending in a second direction orthogonal to the first direction, a third edge parallel to the first edge, having the first length, and extending in the first direction from the second edge, and a fourth edge parallel to the second edge, having the second length, and extending from the first edge in the second direction, a first sidewall perpendicular to the first surface and extending from the first edge, a second sidewall perpendicular to the first surface and the first sidewall and extending from the second edge, a third sidewall perpendicular to the first surface and the second sidewall and extending from the third edge, and a fourth sidewall perpendicular to the first surface and the third sidewall and extending from the fourth edge, wherein the first surface, the first sidewall, the second sidewall, the third sidewall and the fourth sidewall together may form a recess for receiving and holding the electronic device, and the first surface may include at least one parting line having a third length longer than the first length and shorter than the second length and extending in the second direction.
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公开(公告)号：US11058015B2
公开(公告)日：2021-07-06
申请号：US16655938
申请日：2019-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hangyu Hwang , Changsu Kim , Dukjin Kim , Sooyoung Kim , Jongyoul Noh , Sangsik Na , Jongbae Jeon , Rathore Pranveer Singh , Ingook Hong
Abstract: An electronic device is provided. The electronic device includes a housing including a first plate, a second plate facing in a direction opposite to that of the first plate, and a side member enclosing a space between the first plate and the second plate and formed with a method of solidifying a resin including a predetermined amount of rigidity reinforcing material injected into an injection mold and including a plurality of side surfaces, and a gate mark receiving portion formed in each of the plurality of side surfaces of the side member and configured to receive at least one gate mark according to separation of the injection mold. The gate mark receiving portion is formed by a processing portion disposed at a corresponding position inside a cavity of the injection mold.
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Patent Agency Ranking
公开(公告)号：US12214532B2
公开(公告)日：2025-02-04
申请号：US17554664
申请日：2021-12-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsu Kim , Hyunjung Jung , Hangyu Hwang , Sangsik Na , Hongbum Park
Abstract: An electronic device is provided. The electronic device includes a housing; and a coating layer formed on at least a portion of a surface of the housing, wherein the coating layer comprises a paint, the paint including a one-component acrylate-based paint having a property of being cured by an ultraviolet (UV) light, or a one-component or two-component paint containing acryl and urethane and having a property of being cured by heat, wherein the coating layer has a pattern structure including an uneven pattern through laser processing on a portion of a coating film formed by applying the paint, and wherein two or more regions having different glossiness may exist on the surface of the housing by the pattern structure of the coating layer.
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公开(公告)号：US11908895B2
公开(公告)日：2024-02-20
申请号：US17542728
申请日：2021-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongkyu Song , Jaehyun Yoo , Jangkyu Choi , Jin Heo , Changsu Kim , Chanhee Jeon
IPC: H01L29/08 , H01L29/735
CPC classification number: H01L29/0821 , H01L29/735
Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.
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公开(公告)号：US11817447B2
公开(公告)日：2023-11-14
申请号：US16986533
申请日：2020-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sungjun Song , Hyunkwang Jeong , Changsu Kim , Chanhee Jeon
IPC: H01L27/02
CPC classification number: H01L27/0277 , H01L27/0274 , H01L27/0285
Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.
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公开(公告)号：US12035489B2
公开(公告)日：2024-07-09
申请号：US17861387
申请日：2022-07-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngjong Shin , Hangyu Hwang , Changsu Kim , Hyeonwoo Lee , Sungho Cho , Jeonga Kang , Hyunsuk Choi
CPC classification number: H05K5/02 , G02B3/005 , G02B5/045 , H05K5/0086 , H05K5/03 , G02B3/0025 , G02B3/0031
Abstract: According to an embodiment of the disclosure, an electronic device may include a housing including a rear plate including a first region having a first concavo-convex pattern formed therein, and a second region having a second concavo-convex pattern formed therein, and a processor disposed inside the housing. The first concavo-convex pattern and the second concavo-convex pattern may be integrally formed with the rear plate, and a first depth of the first concavo-convex pattern may be different from a second depth of the second concavo-convex pattern.
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公开(公告)号：US20220231126A1
公开(公告)日：2022-07-21
申请号：US17542728
申请日：2021-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongkyu Song , Jaehyun Yoo , Jangkyu Choi , Jin Heo , Changsu Kim , Chanhee Jeon
IPC: H01L29/08 , H01L29/735
Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.
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